April 4th, 2016 by Lyle Smith
Samsung Begins Mass Production Of 10-nanometer Class, 8Gb DDR4 DRAM Chips
Samsung has announced that it has begun mass producing the industry’s first 10-nanometer class, 8Gb DDR4 DRAM chips and the modules derived from them. Samsung indicates that it significantly improves the wafer productivity and increases the data transfer rate to 3,200 Mbps, both of which are 30% faster than the 20nm 8Gb DDR4 DRAM. The new modules also consume 10 to 20 percent less power compared to their 20nm-process-based equivalents. Earlier this year, Samsung announced the mass production of HBM2 4GB DRAM package and 256GB embedded memory based on UFS 2.0.
Samsung was able created this new 10nm-class cell structure by leveraging a proprietary circuit design technology coupled with quadruple patterning lithography. While quadruple patterning allowed for the use of existing photolithography equipment, it was Samsung's in-house technological foundation that enabled the development of the next-generation 10nm-class DRAM.
Moreover, refined dielectric-layer deposition technology facilitated additional performance improvements in the new 10nm-class DRAM. Samsung adds that their engineers applied ultra-thin dielectric layers with “unprecedented uniformity” to a thickness of just a single-digit angstrom on cell capacitors. This resulted in the necessary capacitance for higher cell performance.
Samsung plans to introduce a 10nm-class mobile DRAM solution with high density and speed, which is slated for a release later this year. The company also expects to extend its 20nm DRAM line-up with its new 10nm-class DRAM portfolio during 2016.