December 20th, 2017 by Lyle Smith
Samsung Begins Mass Production Of 2nd-Gen 10-nanometer Class, 8Gb DDR4 DRAM Chips
Samsung has announced that it has begun mass producing the industry’s first 2nd-generation 10-nanometer class (1y-nm), 8Gb DDR4 DRAM. Designed for high-end computing systems from now and in the future, Samsung’s new RAM is touted as the highest performing and most energy-efficiency 8Gb DRAM chip available coupled with the smallest dimensions.
The 2nd-generation 10nm-class 8Gb DDR4 boasts roughly a 30% productivity gain over the previous generation from April 2016. Moreover, Samsung indicates that its performance and energy efficiency have been improved by approximately 10 and 15 percent, respectively, due to the company’s advanced, proprietary circuit design technology. The 2nd-gen 8Gb DDR4 can also operate at 3,600Mbps per pin, which is 400Mbps faster than the previous generation as well.
Samsung explains that it was able to accomplish this through applying new technologies without having to use an EUV process. This new DRAM technology also benefited from a high-sensitivity cell data sensing system, which allows for a more accurate determination of the data stored in each cell, and a progressive “air spacer” scheme, which is placed around its bit lines to considerably decrease parasitic capacitance. Samsung was thus able to significantly increase the level of circuit integration and manufacturing productivity.
Samsung has completed validating the 2nd-generation 10nm-class DDR4 modules with CPU manufacturers and plans to also manufacture more of its mainstream 1st-generation 10nm-class DRAM.