by Adam Armstrong

Samsung Introduces 800GB Z-SSD

Today Samsung Electronics Co., Ltd. launched a 800GB version of its Z-SSD, SZ985. This new drive is aimed at use cases such as artificial intelligence (AI), big data, high performance computing (HPC), and Internet of Things (IoT) applications. The new 800GB, as well as the 240GB version, of the Z-SSD will be introduced at ISSCC 2018 in February 11-15 in San Francisco.

The Z-SSD is an ultra-high performance, ultra-low latency four-lane SSD that was first announced over a year ago but Samsung is particularly stingy with the details. The company is quoting performance of 750K IOPS random read, 170K IOPS random write, and 16μs of latency, making it substantially faster than an NVMe drive. They state that the Z-NAND chips have 10 times higher cell read performance over 3-bit V-NAND chips. The drive also comes equipped with 1.5GB LPDDR4 DRAM and a high performance controller.

The Z-SSD has endurance numbers of 30DWPD for five years or 43PB total and 2 million hours MTBF. Use cases include high-speed cache data, log data processing, AI, big data, and IoT.

Samsung main site

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