by Adam Armstrong

Micron Mass Produces 1z Nanometer DRAM

Today Micron Technology, Inc. announced a new advancement in DRAM scaling. Micron claims to be the first memory company to begin mass production of 16Gb DDR4 products using 1z nm process technology. The company is also announcing volume shipments of 16Gb low-power double data rate 4X (LPDDR4X) DRAM in UFS-based multichip packages (uMCP4).

The production of 1z nm technology marks the development and mass production of the industry’s smallest feature size DRAM node. Micron’s new 1z nm 16Gb DDR4 is said to deliver higher bit density, performance enhancements, all the while coming in at a lower cost than 1Y nm node. The new technology is more proof of Micron’s strive to innovate in performance and power consumption for its compute DRAM (DDR4), mobile DRAM (LPDDR4) and graphics DRAM (GDDR6) product lines. The power and performance improvements in a smaller package will be ideal for emerging technologies like AI, autonomous vehicles, 5G, mobile devices, and gaming. 

As stated above, smaller nodes can deliver several benefits. These benefits include up to 40% reduction in power (compared to previous generation 8Gb DDR4-based products. And lower power usage is important for mobile devices searching for longer battery life. Initiating the transition to 1z nm gets Micron out ahead of the curve in terms of offering new benefits to customers. 

Micron DRAM

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