Samsung has announced the expansion of its NAND flash production capacity in Pyeongtaek, Korea, to address mid- to long-term demands, specifically for the market’s emerging technologies. Construction is already well underway at the facility, with mass production of their V-NAND memory slated for a start sometime in the second half of 2021. Samsung indicates that it will continue to make new investments to “seize future market opportunities”.
Samsung’s Pyeongtaek Campus was built back in 2015 and is considered a “hub for next-generation memory technologies,” as it features two of the world’s largest-scale production lines. As such, the company is usually the front runner when it comes to innovation in NAND technology. For example, it was the first company to mass-produce sixth-generation (1xx-layer) V-NAND back in July of last year.
Here is a history of Samsung’s V-NAND mass production:
| Date | V-NAND |
| July 2013 | 1st-generation (24-layer) 128Gb MLC V-NAND |
| Aug. 2013 | 1st-generation 128Gb MLC V-NAND 960GB SSD |
| Aug. 2014 | 2nd-generation (32-layer) 128Gb 3-bit V-NAND |
| Sept. 2014 | 2nd-generation V-NAND SSD |
| Aug. 2015 | 3rd-generation (48-layer) 256Gb 3-bit V-NAND |
| Sept. 2015 | 3rd-generation V-NAND SSD ‘850 EVO’, ‘950 PRO’ |
| Dec. 2016 | 4th-generation (64-layer) 256Gb 3-bit V-NAND |
| Jan. 2017 | 4th-generation V-NAND SSD |
| Jan. 2018 | 4th-generation 512Gb V-NAND 30.72TB SAS SSD |
| May 2018 | 5th-generation (9x-layer) 256Gb 3-bit V-NAND |
| June 2018 | 5th-generation V-NAND SSD |
| June 2019 | 6th-generation (1xx-layer) 256Gb 3-bit V-NAND |
| July 2019 | 6th-generation V-NAND SSD |
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