Samsung has announced that it will be mass producing the industry’s first through silicon via (TSV) DDR4 memory in 128GB modules for enterprise servers and data centers. Samsung’s new TSV RDIMM technology paves the way for ultra-high capacity memory at an enterprise level. The new TSV DRAM module is touted as the largest capacity and the highest energy efficiency of any DRAM modules currently available, all the while performing at high speeds and with a focus on reliability. The 128GB TSV DDR4 RDIMM is equipped with 144 DDR4 chips arranged into 36 4GB DRAM packages, each of which contain four 20-nm-based 8Gb chips assembled with advanced TSV packaging technology. Last week, the company announced a partnership with Netlist to produce a new class of memory solution, NVDIMM-P (NV-P)
Samsung has announced that it will be mass producing the industry’s first through silicon via (TSV) DDR4 memory in 128GB modules for enterprise servers and data centers. In addition, Samsung’s new TSV RDIMM technology paves the way for ultra-high capacity memory at an enterprise level. The new TSV DRAM module is touted as the largest capacity and the highest energy efficiency of any DRAM modules currently available, all the while performing at high speeds and with a focus on reliability. The 128GB TSV DDR4 RDIMM is equipped with 144 DDR4 chips arranged into 36 4GB DRAM packages, each of which contain four 20-nm-based 8Gb chips assembled with advanced TSV packaging technology. Last week, the company announced a partnership with Netlist to produce a new class of memory solution, NVDIMM-P (NV-P)
While traditional chip packages interconnect die stacks via wire bonding, TSV packages use chip dies that are ground down to just micrometers then pierced with hundreds of fine holes and vertically connected by electrodes passing through the holes. This enables a substantial increase in signal transmission. Additionally, Samsung’s new 128GB TSV DDR4 module is comprised of a unique design where the master chip of each 4GB package embeds the data buffer function to optimize module performance and power efficiency. This creates a low-power solution for next-generation servers as well as speeds at up to 2,400 Mbps. Samsung indicates that this number is almost twice the performance and 50% more power efficient compared to 64GB LRDIMMs. In addition, Samsung’s TSV DRAM will include modules with data transfer speeds upwards of 2,667Mbps and 3,200Mbps, designed for intensifying enterprise server needs.
Samsung plans to offer a complete lineup of its new high-performance TSV DRAM modules within the next several weeks including 128GB LRDIMMs. The company also plans to expand TSV applications into high bandwidth memory (HBM) and consumer products.
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