Huawei launched the ES3000 V3 NVMe enterprise SSD in 2016, their first NVMe drive for the enterprise. Overall, the drive was a good first effort as NVMe was just finding its way into the most demanding applications in the data center. This summer, Huawei has built on the foundation of the V3 family with the ES3000 V5 portfolio. The product

This week at FMS 2018 in Santa Clara, Seagate Technologies announced that it was expanding its Nytro portfolio adding more SSD flash drives. Though the company has some SSDs for end users, it announced more enterprise SSDs including the Nytro 1000 SATA and Nytro 5020 NVMe. These new enterprise drives are aimed at data centers

Today Samsung Electronics Co., Ltd., announced that it is mass-producing a 4-bit or quad-level cell (QLC) SATA SSD for consumers. The company states that this will result in a 4TB SATA SSD for the consumers market, an industry’s first using QLC. 

The Samsung PM1725a is a relatively minor update to the PM1725 NVMe SSD that was launched in the summer of 2015. Targeted at server and array vendors, the PM1725a slots in as a high-performance option that’s also available in relatively high capacities for NVMe SSDs with the range topping out at 6.4TB. The PM1725a features Samsung’s 48-layer TLC V-NAND and Samsung’s own

Intel’s Optane SSD DC P4800X series was launched back in March of 2017 with the promise of bringing a new storage class memory (SCM) media called 3D XPoint (Intel branded as Optane) to market. The P4800X launched as both a traditional 2.5″ NVMe drive (U.2) as well as a PCIe add-in card. Initial capacities started out at 375GB with

Today Western Digital Corporation (WDC) introduced what it is calling the fastest dual-port SAS SSD in the market, the new Ultrastar DC SS530. The new SAS drive expands capacity up to 15.36TB while retaining the 2.5-inch, 15mm form factor. The increase in performance and capacity will give customers better TCO in their data centers with

Toshiba has announced the XG6, the market’s first SSD built on 96-layer 3D TLC BiCS FLASH memory. The XG6 fits right in the middle of Toshiba’s client portfolio as their newest mainstream NVMe entry, replacing the impressive XG5, targeted towards client PCs, high-performance mobile device, gaming segments and embedded use cases. The XG6 is also ideal

Samsung are the first to announce that they have successfully developed a 10-nanometer class (process node between 10 and 20 nanometers). This announcement is not only ahead of Samsung’s competitors, but also ahead of the finalization of the specifications for DDR5 & LPDDR5. JEDEC, the standards group for the microelectronics industry, is still forecasting the release of

Samsung has begun mass producing its fifth-generation of 90-layer 256Gb 3D TLC NAND V-NAND memory as the industry's first company to use the Toggle DDR 4.0 interface. The company went on to say that, due to this new interface, the data transmitting speed between storage and memory via their new V-NAND hit a whopping 1.4Gbps,